170V-300V GigaMOS^TM Power MOSFETs from IXYS - “Best in Class” Energy Efficiency for Lower-Voltage, Higher-Current Applications

These power MOSFETs provide high current capability (up to 260A), eliminating the need for multiple components when paralleling lower current MOSFET devices in high power applications. The resultant effect is a reduction in part count, as well as the number of required drive components, improving over-all system reliability and simplicity. These power MOSFETs are optimized for superior switching performance in a broad range of high power switching applications.

GigaMOS^TM Power MOSFETs incorporate IXYS’ Trench Technology to achieve low Rds(on) and gate charge (Qg), while maintaining superior switching performance and ruggedness. Power switching capability is further enhanced by IXYS’ proven HiPerFETTM process yielding a fast intrinsic rectifier which provides low reverse recovery charge (Qrr) and excellent commutating dV/dt ratings. Additional features include a 175 degree Centigrade operating temperature and avalanche capabilities. These combined product attributes coupled with high current ratings, make for an ideal device for high current power switching applications.

IXYS’ GigaMOS^TM Power MOSFETs are available in various standard packages and are offered in 170V, 200V, 250V, and 300V grades with current ratings from 120A to 260A. These Power MOSFETs provide designers with high current solutions in a variety of applications such as DC to DC converters, battery chargers, switch/resonant mode power supplies, dc choppers, motor drives, uninterruptible power supplies and synchronous rectifiers. The high current capability of these devices make them suitable for electric and hybrid car and carts and other high power battery powered electrical equipment and tools.

For further information please download the New Product Brief or contact us.